Issue 29, 2008

Tuning of hole doping level of iodine-encapsulated single-walled carbon nanotubes by temperature adjustment

Abstract

We present a simple approach of tuning the hole doping level of iodine-doped single-walled carbon nanotubes by adjusting temperature, utilizing the structural conversion of iodine species encapsulated in SWNTs.

Graphical abstract: Tuning of hole doping level of iodine-encapsulated single-walled carbon nanotubes by temperature adjustment

Supplementary files

Article information

Article type
Communication
Submitted
25 Mar 2008
Accepted
23 Apr 2008
First published
23 May 2008

Chem. Commun., 2008, 3429-3431

Tuning of hole doping level of iodine-encapsulated single-walled carbon nanotubes by temperature adjustment

Z. Wang, L. Wang, Z. Shi, J. Lu, Z. Gu and Z. Gao, Chem. Commun., 2008, 3429 DOI: 10.1039/B804964E

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