Fabrication of SiC–C coaxial nanocables: thickness control of C outer layers

Abstract

Aligned SiC–C coaxial nanocables were synthesized via the direct growth of SiC nanowires from silicon substrates and subsequent carbon deposition using pyrolysis of methane; the average diameter of the SiC nanowire cores is 20 nm; the thickness of the C outer layers is controlled in the range 3–50 nm; the degree of crystalline perfection of the graphitic sheets increases with the thickness.