A single-phase polycrystalline mixed-metal oxide WCoO4 film on Si(100) can be prepared by MOCVD with the use of [(η-C5H5)(CO)3WCo(CO)4] as a single-source precursor.
S. Shyu, J. Wu, S. Chuang, K. Chi and Y. Sung, Chem. Commun., 1996, 2239 DOI: 10.1039/CC9960002239
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