Issue 16, 2014
From the journal:

Analyst

High-performance Hg2+ FET-type sensors based on reduced graphene oxide–polyfuran nanohybrids†

Jin Wook Park,a   Seon Joo Park,a   Oh Seok Kwon,b   Choonghyen Leea  and  Jyongsik Jang*a  

* Corresponding authors

a World Class University (WCU) Program of Chemical Convergence for Energy & Environment (C2E2), School of Chemical and Biological Engineering, College of Engineering, Seoul National University (SNU), Seoul, Korea
E-mail: jsjang@plaza.snu.ac.kr
Fax: +82 2 888 1604
Tel: +82 2 880 7069

b Department of Chemical and Environmental Engineering, School of Engineering and Applied Science, Yale University, New Haven, USA

Abstract

A new type of field-effect transistor (FET) sensor, based on reduced graphene oxide (rGO)–polyfuran (PF) nanohybrids, was strategically developed. The sensing transducer exhibited a rapid response (<1 s) and high sensitivity (10 pM) in a liquid-ion-gated FET-type Hg2+ sensor. Excellent Hg2+ discrimination in heavy metal mixtures was also monitored in real time.

Graphical abstract: High-performance Hg2+ FET-type sensors based on reduced graphene oxide–polyfuran nanohybrids

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Article information

DOI
https://doi.org/10.1039/C4AN00403E
Article type
Communication
Submitted
27 Feb 2014
Accepted
03 Apr 2014
First published
07 May 2014

Analyst, 2014,139, 3852-3855

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High-performance Hg2+ FET-type sensors based on reduced graphene oxide–polyfuran nanohybrids

J. W. Park, S. J. Park, O. S. Kwon, C. Lee and J. Jang, Analyst, 2014, 139, 3852 DOI: 10.1039/C4AN00403E

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