Correction: Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO2 films for dynamic random-access memory capacitors

Tae Kyun Kim; Haengha Seo; Junil Lim; Heewon Paik; Jonghoon Shin; Haewon Song; Dae Seon Kwon; Cheol Seong Hwang

doi:10.1039/D6TC90030E

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Correction: Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO₂ films for dynamic random-access memory capacitors

Tae Kyun Kim,^a Haengha Seo,^a Junil Lim,^a Heewon Paik,^a Jonghoon Shin,^a Haewon Song,^a Dae Seon Kwon*^b and Cheol Seong Hwang*^a

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* Corresponding authors

^a Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, Republic of Korea
E-mail: cheolsh@snu.ac.kr

^b Department of Chemical and Biological Engineering, Sookmyung Women's University, Seoul, Republic of Korea
E-mail: dskwon@sookmyung.ac.kr

Abstract

Correction for ‘Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO₂ films for dynamic random-access memory capacitors’ by Tae Kyun Kim et al., J. Mater. Chem. C, 2025, 13, 16969–16980, https://doi.org/10.1039/D5TC01401H.

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Effect of yttrium feeding time on the electrical and structural properties of at…

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DOI: https://doi.org/10.1039/D6TC90030E
Article type: Correction
Submitted: 23 Feb 2026
Accepted: 23 Feb 2026
First published: 03 Mar 2026
This article is Open Access

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J. Mater. Chem. C, 2026,14, 4170-4171

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Correction: Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO₂ films for dynamic random-access memory capacitors

T. K. Kim, H. Seo, J. Lim, H. Paik, J. Shin, H. Song, D. S. Kwon and C. S. Hwang, J. Mater. Chem. C, 2026, 14, 4170 DOI: 10.1039/D6TC90030E

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Journal of Materials Chemistry C

Correction: Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO₂ films for dynamic random-access memory capacitors

Abstract

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Correction: Effect of yttrium feeding time on the electrical and structural properties of atomic layer deposited Y-doped TiO₂ films for dynamic random-access memory capacitors

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