Correction: Designing high-performance infrared optoelectronic materials: indium-site substitution in LiInSe2 with Al, Ga, Sn, and Sb

Jiahuan Chen; Sichen Luo; Yuqing Yang; Yanan Zhang; Suwen Han; Pengfei Lu; Chunlian Xiong; Yue Cheng; Changcheng Chen; Xiaoning Guan

doi:10.1039/D6RA90033J

Correction: Designing high-performance infrared optoelectronic materials: indium-site substitution in LiInSe₂ with Al, Ga, Sn, and Sb

Jiahuan Chen,^a Sichen Luo,^b Yuqing Yang,^a Yanan Zhang,^b Suwen Han,^b Pengfei Lu,^b Chunlian Xiong,^c Yue Cheng,^c Changcheng Chen^c and Xiaoning Guan*^a

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* Corresponding authors

^a International School, Beijing University of Posts and Telecommunications, Beijing 100876, China
E-mail: guanxn@bupt.edu.cn

^b School of Integrated Circuits, Beijing University of Posts and Telecommunications, Beijing 100876, China

^c School of Science, Xi'an University of Architecture and Technology, Xi'an 710055, China

Abstract

Correction for ‘Designing high-performance infrared optoelectronic materials: indium-site substitution in LiInSe₂ with Al, Ga, Sn, and Sb’ by Jiahuan Chen et al., RSC Adv., 2025, 15, 47981–47988, https://doi.org/10.1039/D5RA05215G.

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Correction: Designing high-performance infrared optoelectronic materials: indium-site substitution in LiInSe₂ with Al, Ga, Sn, and Sb

Abstract

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Correction: Designing high-performance infrared optoelectronic materials: indium-site substitution in LiInSe₂ with Al, Ga, Sn, and Sb

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