Si-doped CsSrI3 perovskites as potential dielectrics in MIM capacitors: recent advances, limitations and prospects

Abstract

Halide perovskites have emerged as the current trending materials for applications in energy storage and other high-performance optoelectronic devices due to their charge-carrier dynamics, low defect density, enhanced breakdown voltage and high dielectric profiles. Si-doped materials, such as oxides and perovskites, play a significant role in high-efficiency capacitors because of the tunable charge storage mechanisms enabled by Si. Regulating the fabrication of Si-doped CsSrI₃ dielectric materials is a crucial step to realize a practical metal-insulator-metal (MIM) capacitor with highly sustainable characteristics. Despite their potential, a recent literature survey shows that very few works have been performed on CsSrI₃ perovskites, prompting further research on their various properties, especially in the context of charge storage. This review highlights the recent progress in Si-doped CsSrI₃ perovskites as dielectric chips for MIM capacitor applications. The remaining challenges in the research on Si-based CsSrI₃ perovskite optoelectronic devices are also discussed.