Issue 4, 2025

Strain-tuning of perpendicular magnetic anisotropy and valley topological phase transition in the SVNH monolayer

Abstract

As a novel dimension in the realm of scientific inquiry, the exploration, manipulation, and effective utilization of the valley have garnered significant attention. In this research, we utilize first-principles calculations to anticipate a novel Janus monolayer, SVNH, which demonstrates good stability at room temperature. Additionally, we delve into the influence of biaxial strain on both the valley characteristics and magnetic behaviors of the material. This research indicates that the magnetic anisotropy of SVNH is primarily induced by the coupling between the dxy and dx2y2 orbitals of the V atoms. As the biaxial strain intensifies, the magnetic easy axis undergoes a transition from an in-plane (IP) to an out-of-plane (OP) orientation. Additionally, with further enhancement of the strain, the sequential closing of the −K valley and the K valley leads to the occurrence of topological phase transitions, which are related to the orbital inversions between dxy + dx2y2 and dz2 orbitals. Our research has enriched the two-dimensional ferrovalley (FV) family, holding significant implications for the design and application of valley-dependent materials.

Graphical abstract: Strain-tuning of perpendicular magnetic anisotropy and valley topological phase transition in the SVNH monolayer

Supplementary files

Article information

Article type
Paper
Submitted
01 Sep 2024
Accepted
25 Nov 2024
First published
04 Dec 2024

J. Mater. Chem. C, 2025,13, 1945-1953

Strain-tuning of perpendicular magnetic anisotropy and valley topological phase transition in the SVNH monolayer

X. Chen, Z. Gao, Y. Xu, M. Qin, Y. He and K. Xiong, J. Mater. Chem. C, 2025, 13, 1945 DOI: 10.1039/D4TC03757J

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements