Issue 56, 2025, Issue in Progress

Strain evolution and in situ phase transitions in freestanding BaTiO3 epitaxial membranes via a La2/3Sr1/3MnO3 sacrificial layer

Abstract

Freestanding epitaxial thin films offer huge potential for flexible electronics and heterogeneous integration with next-generation devices. Herein, we successfully demonstrate the support-free lift-off of a single-crystalline BaTiO3 (BTO) epilayer using a La2/3Sr1/3MnO3 (LSMO) sacrificial layer deposited on a SrTiO3 (001) single-crystalline substrate. The freestanding BTO membrane was heterogeneously integrated onto glass, enabling the study of the etched surface. With a c/a ratio of 1.005, the epitaxial BTO exhibited an out-of-plane compression with an in-plane tensile strain compared to the bulk counterparts, with an out-of-plane strain relaxation observed in the freestanding membrane compared to the epitaxial stacks. Surface characterization via X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and optical profilometry confirms the structural and surface integrity. Temperature-dependent confocal Raman spectroscopy demonstrates in situ phase transitions in the freestanding BTO layer across the low- and high-temperature regimes (−170–200 °C). Overall, this work advances the heterogeneous integration of freestanding single-crystalline BTO membranes, providing critical insights into their strain-state evolution and temperature-dependent phase stability.

Graphical abstract: Strain evolution and in situ phase transitions in freestanding BaTiO3 epitaxial membranes via a La2/3Sr1/3MnO3 sacrificial layer

Supplementary files

Article information

Article type
Paper
Submitted
09 Oct 2025
Accepted
22 Nov 2025
First published
04 Dec 2025
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2025,15, 47946-47954

Strain evolution and in situ phase transitions in freestanding BaTiO3 epitaxial membranes via a La2/3Sr1/3MnO3 sacrificial layer

K. Gurukrishna, A. U. Kamat, R. Kumar, A. Garg and S. Misra, RSC Adv., 2025, 15, 47946 DOI: 10.1039/D5RA07695A

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