Issue 15, 2025, Issue in Progress

A DFT study for hydrogen storage application on pristine magnesium dicarbide (MgC2) monolayer

Abstract

The hydrogen storage potential of pure MgC2 was systematically investigated using density functional theory (DFT) calculations. The phonon dispersion and ab initio molecular dynamics (AIMD) simulations confirmed the dynamic and structural stability of MgC2, reinforcing its suitability as a promising hydrogen storage material. The electronic structure analysis revealed that pure MgC2 exhibits semiconducting behavior with a band gap of 0.25 eV, and transforms into a metallic state upon hydrogen adsorption. Hydrogen molecules were adsorbed onto the MgC2 surface via physisorption, with an average adsorption energy of 0.286 eV, indicating moderate binding strength suitable for reversible hydrogen storage. Hirshfeld charge analysis demonstrated that MgC2 transfers 0.041 e, 0.139 e, and 0.259 e to 1, 4, and 8 hydrogen molecules, respectively, highlighting charge redistribution upon adsorption. The calculated hydrogen storage capacity of 2.05% suggests a feasible adsorption mechanism. Additionally, AIMD simulations at 400 K confirmed that hydrogen adsorption does not induce significant distortions in the MgC2 framework, further validating its thermal and mechanical stability. These findings underscore the potential of MgC2 as an efficient hydrogen storage material for sustainable energy applications, offering a promising pathway for the development of next-generation clean energy technologies.

Graphical abstract: A DFT study for hydrogen storage application on pristine magnesium dicarbide (MgC2) monolayer

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Article information

Article type
Paper
Submitted
20 Jan 2025
Accepted
10 Mar 2025
First published
11 Apr 2025
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2025,15, 11409-11416

A DFT study for hydrogen storage application on pristine magnesium dicarbide (MgC2) monolayer

I. Ahmed, U. Iqrar, A. Saeed, R. Alotaibi, S. M. Ali, M. Anwar and M. I. Khan, RSC Adv., 2025, 15, 11409 DOI: 10.1039/D5RA00486A

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