Atomistic observation of defect evolution during solidification in semiconductor InAs

Abstract

The structural and phase stability of semiconductors has attracted considerable attention due to their potential applications in next-generation optoelectronic, thermoelectric, and quantum devices. Atomistic observations are crucial for understanding the defect formation during solidification in semiconductors. In this study, an in situ biasing experiment was conducted using a transmission electron microscope to investigate the detailed evolution of stacking faults and twinning at the solid–liquid interface in InAs. The results highlight that nucleation energy regulation is key to defect formation. Additionally, thermally driven dislocation slip, stacking fault dynamics, and twin dissociation reveal new pathways for defect evolution in advanced semiconductors.