Issue 8, 2025

An ultra-violet and infrared dual-band photodetector using a Ga2O3 thin film and HgTe colloidal quantum dots

Abstract

Dual-band photodetection of ultraviolet (UV) and infrared (IR) light is an advanced technology aimed at simultaneously or selectively detecting signals from these two distinct wavelength bands. This technique offers broad application prospects, particularly in environments requiring multispectral information. In this work, a solar-blind UV photodetector made from an amorphous Ga2O3 (a-Ga2O3) thin film was combined with a short-wave infrared photodetector made from a HgTe colloidal quantum dot (CQD) film. The photodetector exhibited a high responsivity of up to 1808 A W−1, detectivity of 3.88 × 1014 Jones, and an external quantum efficiency of 8.8 × 105% at UV wavelength as well as a responsivity of 0.25 A W−1, detectivity of 1.45 × 1010 Jones, and an external quantum efficiency of 15.5% at short-wave infrared wavelength. Furthermore, corona discharge detection using this photodetector was demonstrated.

Graphical abstract: An ultra-violet and infrared dual-band photodetector using a Ga2O3 thin film and HgTe colloidal quantum dots

Article information

Article type
Paper
Submitted
25 Nov 2024
Accepted
14 Feb 2025
First published
17 Feb 2025
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2025,7, 2248-2254

An ultra-violet and infrared dual-band photodetector using a Ga2O3 thin film and HgTe colloidal quantum dots

Q. Zheng, Y. Yang, L. Li, Q. Xu, K. Zhang, X. Xue, L. Ma, J. Yu, W. Li and M. Chen, Nanoscale Adv., 2025, 7, 2248 DOI: 10.1039/D4NA00978A

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