Issue 38, 2024

A strong coupling mechanism between ferromagnetism and piezoelectricity in 2D ferroelectric CrXSYBrZ with high carrier mobility

Abstract

Materials with both ferromagnetism and excellent piezoelectricity can be classified as multifunctional materials and have been a focus of recent studies. At present, reported research studies focus mainly on three-dimensional materials. Herein, we report a series of two-dimensional (2D) multifunctional materials. Using first-principles calculations, we designed and predicted that 2D CrXSYBrZ (X = Cr or Mo, Y = S or Se and Z = H, F, Cl or Br) exhibit ferromagnetism and excellent out-of-plane piezoelectricity, and also have high carrier mobility. Importantly, the out-of-plane piezoelectric stress coefficient e33 of CrXBrYSZ is positively correlated with the difference in the sum electronegativity of the upper and lower parts in CrXBrYSZ. This physical mechanism is defined as the electronegativity difference effect, which reflects the intensity of the asymmetric charge transfer in CrXSYBrZ. Furthermore, the magnetic moment enhancement of Cr and Mo inhibits the asymmetric polarization charge transfer inside CrMoS2Br2 along the z-axis, and thereby significantly decreases the out-of-plane piezoelectricity of CrMoS2Br2. The coupling mechanism between ferromagnetism and out-of-plane piezoelectricity of CrMoS2Br2 is most obvious among CrXSYBrZ monolayers. Additionally, the out-of-plane piezoelectric stress coefficient e33 and atomic magnetic moments of these monolayers can be manipulated through biaxial strain. Therefore, CrXSYBrZ exhibit potential applications in multifunctional electromechanical and magnetic nanodevices.

Graphical abstract: A strong coupling mechanism between ferromagnetism and piezoelectricity in 2D ferroelectric CrXSYBrZ with high carrier mobility

Supplementary files

Article information

Article type
Paper
Submitted
11 Jun 2024
Accepted
29 Jul 2024
First published
14 Aug 2024

J. Mater. Chem. C, 2024,12, 15541-15552

A strong coupling mechanism between ferromagnetism and piezoelectricity in 2D ferroelectric CrXSYBrZ with high carrier mobility

X. Shang, G. Du, J. Wang, D. Zhu, F. Liu, X. Liu, Z. Lv, F. Guo and X. Wang, J. Mater. Chem. C, 2024, 12, 15541 DOI: 10.1039/D4TC02409E

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