Issue 31, 2024

Optimized responsivity of a phototransistor using graphene oxide-doped solution-processed indium oxide active layer toward neuromorphic applications

Abstract

Recently, metal oxide semiconductors have attracted considerable interest in certain areas, such as displays. Applications of transparent metal oxide semiconductors in photosensors are also starting to develop owing to their high charge carrier concentration and mobility. By including a narrow bandgap material in the device, photoresponsivity can be improved, but it increases the number of fabrication steps. This paper suggests embedding an indium oxide thin film with graphene oxide (GO) photoactive particles in a single step from a mixed aqueous precursor solution by spin coating. The device performance was assessed as a function of the GO content. The device stability data showed that a higher GO content induced hole trapping under prolonged gate bias stress. Hole trapping at the In2O3/GO interface is important under illumination, where the trapping of the minor photogenerated carrier can improve the photocurrent via the photogating effect. The long-term trapping of holes in the n-type device also produces a persistent photocurrent, which makes the device respond to illumination like an artificial neuron. In addition to photodetection, the device applicability in binary logic circuits was also demonstrated via a load-type inverter. The phototransistor proposed in this study could achieve sensing, memory, and binary logic in the same device.

Graphical abstract: Optimized responsivity of a phototransistor using graphene oxide-doped solution-processed indium oxide active layer toward neuromorphic applications

Article information

Article type
Paper
Submitted
30 Apr 2024
Accepted
07 Jul 2024
First published
15 Jul 2024

J. Mater. Chem. C, 2024,12, 12090-12098

Optimized responsivity of a phototransistor using graphene oxide-doped solution-processed indium oxide active layer toward neuromorphic applications

G. Tarsoly, H. Zhao, X. Wang, J. Lee and S. Kim, J. Mater. Chem. C, 2024, 12, 12090 DOI: 10.1039/D4TC01780C

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