Issue 20, 2024

Construction of nanorod-shaped TiO2/Cu3N p–n heterojunction for efficient visible-light hydrogen evolution

Abstract

Developing highly efficient and low-cost photoelectrocatalyst for H2 evolution under visible-light irradiation is a key topic in the areas of energy and environment. In this work, we designed and deposited p-type semiconductor Cu3N onto 1D n-type rutile TiO2 nanorod array by the magnetron sputtering method. The formed TiO2/Cu3N p–n heterojunction not only exhibits a narrowed band gap from 3.09 eV for TiO2 to 2.01 eV for TiO2/Cu3N but also expands the light-response from UV to visible-light region. In addition, the lifetime, separation and transfer of the photogenerated electron–hole pairs are efficiently prolonged and improved due to the build-in electric field at the interface of the TiO2/Cu3N p–n heterojunction. As a result, the photocurrent density under >420 nm visible-light irradiation is enhanced for about 14.12 times, from −0.33 mA cm−2 for TiO2 to −4.66 mA cm−2 for TiO2/Cu3N at −0.97 V vs. RHE (reversible hydrogen electrode). Furthermore, the constructed TiO2/Cu3N heterojunction shows stable PEC H2 evolution performance, with the H2 production rate reaching 6.98 μmol cm−2 h−1 under >420 nm visible-light irradiation. Our results suggest that the construction of nontoxic p–n heterojunction with suitable band gap should be a promising strategy to improve the photoelectrocatalytic performance of TiO2 and should be applied in other photoelectrocatalysts.

Graphical abstract: Construction of nanorod-shaped TiO2/Cu3N p–n heterojunction for efficient visible-light hydrogen evolution

Supplementary files

Article information

Article type
Paper
Submitted
06 Mar 2024
Accepted
23 Apr 2024
First published
24 Apr 2024

J. Mater. Chem. C, 2024,12, 7366-7376

Construction of nanorod-shaped TiO2/Cu3N p–n heterojunction for efficient visible-light hydrogen evolution

Z. Cheng, N. Gan, G. Yuan, A. Wang, J. Liu, H. Lv, C. Han, M. Wang, M. Luoshan, X. Ma and W. Zou, J. Mater. Chem. C, 2024, 12, 7366 DOI: 10.1039/D4TC00916A

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