Issue 6, 2024

Controllable dual-polarization valley physics in the strain-engineered 2D monolayer of VC2N4

Abstract

Valley-related physics has garnered significant attention in fundamental studies and cutting-edge information technologies. However, such valleytronic materials have rarely been reported and suffer from in-plane magnetization. Herein, based on first-principles calculations and tight-binding model analysis, we identify the existence of intrinsic valley-contrasting physics in bipolar ferromagnetic monolayer VC2N4 with robust perpendicular magnetic anisotropy behavior. Valley polarization arises spontaneously due to the simultaneous presence of broken space- and time-inversion symmetries. Interestingly, valley polarization is remarkably observed in both the valence and conduction bands around the K/K′ valley due to large spin splitting, indicating rare dual-polarization valley features, which is advantageous for achieving the captivating anomalous valley Hall effect relied on the valley-contrasting Berry curvature. Remarkably, the valley polarization can be switched on/off by applying a moderate biaxial strain. Our work provides a competitive candidate for exploring valley-dependent physics and its applications in valleytronics.

Graphical abstract: Controllable dual-polarization valley physics in the strain-engineered 2D monolayer of VC2N4

Supplementary files

Article information

Article type
Paper
Submitted
18 Nov 2023
Accepted
25 Dec 2023
First published
03 Jan 2024

J. Mater. Chem. C, 2024,12, 2156-2164

Controllable dual-polarization valley physics in the strain-engineered 2D monolayer of VC2N4

C. Lei, S. Cao, Z. Gong, X. Li, Y. Ma, J. Gao, J. Bi, R. Ahuja and Z. Qian, J. Mater. Chem. C, 2024, 12, 2156 DOI: 10.1039/D3TC04255C

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