Issue 1, 2024

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga2O3 films by introducing Zn impurity

Abstract

ε-Ga2O3 films with and without Zn impurity were epitaxially grown by metal organic chemical vapor deposition on a c-plane sapphire substrate, and were then face-to-face annealed in an oxygen atmosphere at 600 °C. The structural and photoelectric properties of the thin films were characterized and analyzed in detail. The Zn-doped ε-Ga2O3 photodetector exhibits an ultra-high specific detectivity of 1.7 × 1016 Jones, a very quick response speed of less than 40 ms, and an extremely high UV-visible rejection ratio of 2.0 × 108 at a 10 V bias. In addition, the temperature dependent photoresponse properties have been investigated from 30 °C to 190 °C. The compensation effect of Zn impurities and their suppression of oxygen vacancies, as well as the improvement of crystal quality, should be responsible for the excellent performance of the device. Our results provide a new idea and guidance for achieving high-performance solar-blind photodetectors based on Ga2O3.

Graphical abstract: Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga2O3 films by introducing Zn impurity

Supplementary files

Article information

Article type
Paper
Submitted
05 Oct 2023
Accepted
24 Oct 2023
First published
26 Oct 2023
This article is Open Access
Creative Commons BY-NC license

J. Mater. Chem. C, 2024,12, 118-124

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga2O3 films by introducing Zn impurity

X. Sun, K. Liu, X. Chen, Y. Zhu, Z. Cheng, J. Yang, B. Li, L. Liu and D. Shen, J. Mater. Chem. C, 2024, 12, 118 DOI: 10.1039/D3TC03599A

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