Correction: Mechanical force-driven multi-state memory in WO3−δ thin films

Mingdi Yang; Zonglin Lv; Shan Li; Jiaqi Li; Jinpeng Cao; Junjie Chen; Yilin Wang; Kun Lin; Qiang Li; Jun Miao; Xianran Xing

doi:10.1039/D4QI90051K

Correction: Mechanical force-driven multi-state memory in WO_3−δ thin films

Mingdi Yang,^a Zonglin Lv,^a Shan Li,^a Jiaqi Li,^a Jinpeng Cao,^a Junjie Chen,^a Yilin Wang,^b Kun Lin,^a Qiang Li,*^a Jun Miao^a and Xianran Xing*^a

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* Corresponding authors

^a Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
E-mail: xing@ustb.edu.cn, qiangli@ustb.edu.cn

^b College of Materials Science and Engineering, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China

Abstract

Correction for ‘Mechanical force-driven multi-state memory in WO_3−δ thin films’ by Mingdi Yang et al., Inorg. Chem. Front., 2024, 11, 3919–3926, https://doi.org/10.1039/D4QI00789A.

Inorganic Chemistry Frontiers

Correction: Mechanical force-driven multi-state memory in WO_3−δ thin films

Abstract

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Correction: Mechanical force-driven multi-state memory in WO_3−δ thin films

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