Issue 20, 2024

Thermally stable NIR broad emission of Cr3+ doping phosphor with a high output power

Abstract

The development of high-performance near-infrared (NIR) luminescent materials remains a significant challenge, particularly in enhancing thermal stability. Herein, we observed an anti-thermal quenching effect in the YGa1.5Al1.5(BO3)4:Cr3+ phosphor, with its emission intensity reaching 104% at 423 K and 101% at 483 K compared to room temperature. This anti-thermal quenching is mainly attributed to thermal-induced emission compensation resulting from excited electrons trapped at crystal defects, as confirmed by density functional theory computation. Additionally, YGa1.5Al1.5(BO3)4:Cr3+ exhibits a broad NIR emission peaking at 760 nm with a full width at half maximum of 135 nm and a high photoluminescence quantum yield (86%). As a proof-of-concept, we fabricated an NIR phosphor-converted light-emitting diode device that achieves an NIR output power of 59.67 mW with an input working current of 150 mA, demonstrating a photoelectric conversion efficiency of 13.6%. The utilization of this high-power NIR light-emitting diode device as a lighting source enables a penetration depth of up to 15 mm, demonstrating the potential applications of Cr3+-doped YGa1.5Al1.5(BO3)4:Cr3+ phosphors for non-invasive detection of biological tissue.

Graphical abstract: Thermally stable NIR broad emission of Cr3+ doping phosphor with a high output power

Supplementary files

Article information

Article type
Research Article
Submitted
09 Jul 2024
Accepted
16 Aug 2024
First published
22 Aug 2024

Inorg. Chem. Front., 2024,11, 6898-6908

Thermally stable NIR broad emission of Cr3+ doping phosphor with a high output power

Z. Chen, S. Zhang, Z. Li, H. Ye, H. Yan, J. Xu, L. Gao, Y. Li and S. Zhang, Inorg. Chem. Front., 2024, 11, 6898 DOI: 10.1039/D4QI01728E

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