Synthesis of monolayer SiP via chemical vapor transport toward superior optoelectronic and catalytic performance

Abstract

Two-dimensional (2D) materials have attracted significant attention recently due to their broad prospects for optoelectronic applications. As a member of silicon germanium nitride, 2D SiP has become a promising candidate material in various applications because of its advantages, including a large bandgap, fast photoresponse, strong anisotropy, and high chemical stability. We successfully prepared monolayer SiP on mica substrates for the first time using the chemical vapor transport (CVT) method and studied the growth conditions and process of monolayer SiP. The typical applications of 2D SiP in photodetectors and hydrogen evolution reaction (HER) catalysts were emphasized. The results indicate that monolayer SiP has high responsiveness and a reasonable repetition period. Furthermore, it exhibits excellent catalytic activity and stability in hydrogen evolution reactions. In summary, this new growth method may provide insights into the controllable growth of IV–V family 2D semiconductors. Meanwhile, SiP, as a promising optoelectronic, electrochemical catalytic, and energy storage material, will also provide a promising prospect for developing advanced optoelectronic devices and HER electrocatalysts based on 2D materials.