Issue 20, 2024

An overview of critical applications of resistive random access memory

Abstract

The rapid advancement of new technologies has resulted in a surge of data, while conventional computers are nearing their computational limits. The prevalent von Neumann architecture, where processing and storage units operate independently, faces challenges such as data migration through buses, leading to decreased computing speed and increased energy loss. Ongoing research aims to enhance computing capabilities through the development of innovative chips and the adoption of new system architectures. One noteworthy advancement is Resistive Random Access Memory (RRAM), an emerging memory technology. RRAM can alter its resistance through electrical signals at both ends, retaining its state even after power-down. This technology holds promise in various areas, including logic computing, neural networks, brain-like computing, and integrated technologies combining sensing, storage, and computing. These cutting-edge technologies offer the potential to overcome the performance limitations of traditional architectures, significantly boosting computing power. This discussion explores the physical mechanisms, device structure, performance characteristics, and applications of RRAM devices. Additionally, we delve into the potential future adoption of these technologies at an industrial scale, along with prospects and upcoming research directions.

Graphical abstract: An overview of critical applications of resistive random access memory

Article information

Article type
Review Article
Submitted
26 Feb 2024
Accepted
10 Aug 2024
First published
09 Sep 2024
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2024,6, 4980-5006

An overview of critical applications of resistive random access memory

F. Zahoor, A. Nisar, U. I. Bature, H. Abbas, F. Bashir, A. Chattopadhyay, B. K. Kaushik, A. Alzahrani and F. A. Hussin, Nanoscale Adv., 2024, 6, 4980 DOI: 10.1039/D4NA00158C

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