A Zn(ii)-metal ion directed self-healing wide bandgap semiconducting supramolecular metallohydrogel: effective non-volatile memory design for in-memory computing

Abstract

A well-organized, facile method for the development of a rapid supramolecular metallohydrogel of Zn(II)-ions, i.e. Zn@5AP, has been established using 5-amino-1-pentanol as a low molecular weight gelator (LMWG) in water at room temperature. The mechanical properties of the synthesized hydrogel were characterized through angular frequency and oscillatory stress-dependent rheological study. The self-healable nature of Zn@5AP was established through thixotropic analysis. Hierarchical microstructural features were characterized through field-emission scanning electron microscopy (FESEM) and tunneling electron microscopy (TEM) investigation. The EDS elemental mapping confirmed the primary chemical composition of the metallohydrogel. The potential metallohydrogel formation mechanism has been analyzed by FT-IR spectroscopic studies. Furthermore, a zinc(II) metallohydrogel (Zn@5AP)-based Schottky diode device in a lateral metal–semiconductor–metal geometry was fabricated to explore the charge transport behaviour. The resistive random access memory (RRAM) device based on zinc(II) metallohydrogel (Zn@5AP) exhibited bipolar resistive switching behavior at ambient temperature. The RRAM device offers exceptional switching endurance over 5000 consecutive switching cycles with a high ON/OFF ratio of ∼100. Due to the easy fabrication process, robust resistive switching behaviour, and enhanced stability of this system, these structures are suited for usage in non-volatile memory design, neuromorphic and in-memory computing, flexible electronics, and optoelectronics devices.