Issue 1, 2024

Understanding improved capacity retention at 4.3 V in modified single crystal Ni-rich NMC//graphite pouch cells at elevated temperature

Abstract

The capacity retention of commercially-sourced pouch cells with single crystal Al surface-doped Ni-rich cathodes (LiNi0.834Mn0.095Co0.071O2) is examined. The degradation-induced capacity fade becomes more pronounced as the upper-cut-off voltage (UCV) increases from 4.2 V to 4.3 V (vs. graphite) at a fixed cycling temperature (either 25 or 40 °C). However, cycles with 4.3 V UCV (slightly below the oxygen loss onset) show better capacity retention upon increasing the cycling temperature from 25 °C to 40 °C. Namely, after 500 cycles at 4.3 V UCV, cycling temperature at 40 °C retains 85.5% of the initial capacity while cycling at 25 °C shows 75.0% capacity retention. By employing a suite of electrochemical, X-ray spectroscopy and secondary ion mass spectrometry techniques, we attribute the temperature-induced improvement of the capacity retention at high UCV to the combined effects of Al surface-dopants, electrochemically resilient single crystal Ni-rich particles, and thermally-improved Li kinetics translating into better electrochemical performance. If cycling remains below the lattice oxygen loss onset, improved capacity retention in industrial cells should be achieved in single crystal Ni-rich cathodes with the appropriate choice of cycling parameter, particle quality, and particle surface dopants.

Graphical abstract: Understanding improved capacity retention at 4.3 V in modified single crystal Ni-rich NMC//graphite pouch cells at elevated temperature

Supplementary files

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Article information

Article type
Paper
Submitted
27 Jun 2023
Accepted
05 Sep 2023
First published
21 Sep 2023
This article is Open Access
Creative Commons BY license

RSC Appl. Interfaces, 2024,1, 133-146

Understanding improved capacity retention at 4.3 V in modified single crystal Ni-rich NMC//graphite pouch cells at elevated temperature

G. J. Páez Fajardo, M. Belekoukia, S. Bolloju, E. Fiamegkou, A. S. Menon, Z. Ruff, Z. Shen, N. Shah, E. Björklund, M. J. Zuba, T. Lee, P. K. Thakur, R. S. Weatherup, A. Aguadero, M. J. Loveridge, C. P. Grey and L. F. J. Piper, RSC Appl. Interfaces, 2024, 1, 133 DOI: 10.1039/D3LF00093A

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