Thermally tunable anti-ambipolar heterojunction devices

Abstract

Two-dimensional materials and their van der Waals heterostructures have emerged as a research focal point for constructing various innovative electronic devices due to their distinct photonic and electronic properties. Among them, anti-ambipolar devices, characterized by their unique nonlinear electrical behavior, have garnered attention as novel multifunctional components, positioning them as potential contenders for building multi-state logic devices. Utilizing the properties of few-layer As_0.4P_0.6 and PdSe₂, we have constructed an anti-ambipolar heterojunction device. At 300 K, the device exhibits a peak voltage (V_peak) of −3 V and a peak-to-valley ratio (PVR) close to 8 × 10³, and the PVR can be modulated by bias voltage. Furthermore, by characterizing the anti-ambipolar attributes at different temperatures ranging from 80 K to 330 K, we have elucidated the thermally tunable feature of the device. At 330 K, a certain PVR (∼10³) and a large V_peak (∼−16 V) are obtained, while a PVR exceeding 10⁸ has been achieved at 80 K. This temperature-related sensitivity empowers the device with significant potential and thermal tunability in various applications.