Oxygen evolution reaction (OER) active sites in BiVO4 studied using density functional theory and XPS experiments

Abstract

Bismuth vanadate (BiVO₄/BVO) has been widely studied as a photocatalytic water splitting semiconductor material in recent years because of its many advantages, such as its ease of synthesis and suitable band gap (2.4 eV). However, BVO still has some disadvantages, one of which is the low photocatalytic water oxidation activity. It is intriguing and unexpected to note that in the current literature, Bi atoms are taken as the oxygen evolution reaction (OER) active sites, while V metal atoms are not investigated in the OER, and the underlying reason for this remains unknown. In this work, using density functional theory (DFT) calculations and ab initio molecular dynamics simulations, we found that in BVO, the VO₄ tetrahedron structure is very stable and there is strong surface reconstruction that leads to the V atoms on the surface having the same coordinates as in the bulk. For some high index surfaces, there are some theoretically predicted unsaturated V sites, but it is very easy to form a VO₄ tetrahedron structure again by taking oxygen atoms from water. The other intermediates of OER are difficult to adsorb or desorb on this VO₄ structure, which makes the V sites in BVO unsuitable as OER active sites. This VO₄ structure remained stable during the molecular dynamics simulation at 300 and 673 K. The XPS characterization of various BVO morphologies validates our primary findings from DFT and molecular dynamics simulations. It reveals the presence of unsaturated Bi sites on the BVO surface, while unsaturated V sites are not observed. This study provides novel insights into the enhancement of OER activity of BVO and offers a fundamental understanding of OER activity in other photocatalysts containing V atoms.