Growth of high-quality langatate crystals by the Czochralski method with elimination of Ga2O3 volatilization

Abstract

Langatate (La₃Ga_5.5Ta_0.5O₁₄, LGT) crystals have attracted significant attention due to their excellent piezoelectric properties. However, the volatilization of Ga₂O₃ during the traditional Czochralski (Cz) growth often hinders the preparation of high-quality LGT crystals. This work replaced the iridium crucible with a platinum crucible and successfully grew an LGT crystal with a diameter of 60 mm under an air atmosphere by the Cz method, effectively eliminating Ga₂O₃ volatilization. The full width at half maximum of the rocking curve is 25.2′′, and the transmission is 80%. After annealing in Ar at 1100 °C, the resistivity increases to 1.2 × 10⁸ Ω cm at 560 °C. This work has great potential for growing high-quality LGT crystals for use in high-temperature piezoelectric sensors.