Er- and Yb-doped YGa3(BO3)4 and GdGa3(BO3)4 laser materials: high-temperature crystallization and related properties

Abstract

Phase relationships in the Er_xYb_yY_1−x−yGa₃(BO₃)₄–Bi₂O₃–B₂O₃–(Y,Er,Yb)₂O₃–Ga₂O₃ and Er_xYb_yGd_1−x−yGa₃(BO₃)₄–Bi₂O₃–B₂O₃–(Gd,Er,Yb)₂O₃–Ga₂O₃ (x = 0.02, y = 0.11 at%) systems were studied in the temperature range from 1000 to 900 °C. Multicomponent melt Bi₂O₃–Ga₂O₃–B₂O₃–(Y,Gd)₂O₃ was used as a reasonable flux for the high-temperature solution growth of Er_xYb_yR_1−x−yGa₃(BO₃)₄ (R = Y, Gd) spontaneous crystals. The segregation coefficients of Yb and Er impurities in the obtained crystals were determined. The unit cell parameters for the grown crystals as well as their micromorphology and thermal characteristics were studied. The luminescence kinetics were investigated, and the lifetimes of the ⁴I_13/2 energy level of Er³⁺ ions for Er,Yb:YGa₃(BO₃)₄ and Er,Yb:GdGa₃(BO₃)₄ crystals were determined.