Ion migration in p-type perovskite MAPbI3 films under an electric field and thin-film transistor device failure

Jiale Su; Zhenxin Yang; Xuanhe Li; Fushun Li; Juntao Hu; Nan Chen; Tao Zhang; Dengke Wang; Zheng-Hong Lu; Qiang Zhu

doi:10.1039/D4CC03446E

Ion migration in p-type perovskite MAPbI₃ films under an electric field and thin-film transistor device failure†

Jiale Su,

^a Zhenxin Yang,^a Xuanhe Li,^a Fushun Li,^a Juntao Hu,^b Nan Chen,^a Tao Zhang,^a Dengke Wang,^a Zheng-Hong Lu^ac and Qiang Zhu

*^a

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* Corresponding authors

^a Key Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming 650504, China
E-mail: qiangzhu@ynu.edu.cn

^b Department of Physics, Mathematics and Computer Science, Faculty of Basic Medical Science, Kunming Medical University, Kunming, China

^c Department of Materials Science and Engineering, University of Toronto, Toronto M5S 3E4, Canada

Abstract

This study demonstrated a dynamic analysis to investigate the ion migration in p-type perovskite MAPbI₃ films under an electric field, revealing its detrimental effects on the electrical performance of MAPbI₃-based devices. An additive strategy was proposed to suppress ion migration, thereby facilitating the fabrication of high-performance MAPbI₃-based devices.

Chemical Communications

Ion migration in p-type perovskite MAPbI₃ films under an electric field and thin-film transistor device failure†

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Ion migration in p-type perovskite MAPbI₃ films under an electric field and thin-film transistor device failure

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