Issue 21, 2024

Synergistic effect of surface metal vacancies and Schottky junction on high-transconductance organic photoelectrochemical transistor aptasensing

Abstract

The synergistic effect between surface metal vacancies and a Schottky junction on enhanced transconductance, and the gating effect of an organic photoelectrochemical transistor was reported.

Graphical abstract: Synergistic effect of surface metal vacancies and Schottky junction on high-transconductance organic photoelectrochemical transistor aptasensing

Supplementary files

Article information

Article type
Communication
Submitted
07 Dec 2023
Accepted
05 Feb 2024
First published
19 Feb 2024

Chem. Commun., 2024,60, 2934-2937

Synergistic effect of surface metal vacancies and Schottky junction on high-transconductance organic photoelectrochemical transistor aptasensing

J. Lai, C. Fan, F. You, Y. Liu, X. Zhou, Y. Lin, L. Ding and K. Wang, Chem. Commun., 2024, 60, 2934 DOI: 10.1039/D3CC05964B

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