Issue 21, 2024
From the journal:

Chemical Communications

Synergistic effect of surface metal vacancies and Schottky junction on high-transconductance organic photoelectrochemical transistor aptasensing†

Jingjie Lai,a   Cunhao Fan,a   Fuheng You,b   Yuanhao Liu,a   Xilong Zhou,a   Yuhang Lin,a   Lijun Ding*b  and  Kun Wang ORCID logo *a  

* Corresponding authors

a School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013, P. R. China
E-mail: wangkun@ujs.edu.cn

b Key Laboratory for Theory and Technology of Intelligent Agricultural Machinery and Equipment, Jiangsu University, Zhenjiang 212013, P. R. China
E-mail: ljding@ujs.edu.cn

Abstract

The synergistic effect between surface metal vacancies and a Schottky junction on enhanced transconductance, and the gating effect of an organic photoelectrochemical transistor was reported.

Graphical abstract: Synergistic effect of surface metal vacancies and Schottky junction on high-transconductance organic photoelectrochemical transistor aptasensing

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Article information

DOI
https://doi.org/10.1039/D3CC05964B
Article type
Communication
Submitted
07 Dec 2023
Accepted
05 Feb 2024
First published
19 Feb 2024

Chem. Commun., 2024,60, 2934-2937

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Synergistic effect of surface metal vacancies and Schottky junction on high-transconductance organic photoelectrochemical transistor aptasensing

J. Lai, C. Fan, F. You, Y. Liu, X. Zhou, Y. Lin, L. Ding and K. Wang, Chem. Commun., 2024, 60, 2934 DOI: 10.1039/D3CC05964B

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