Issue 32, 2023

Thermal conductivity of sliding bilayer h-BN and its manipulation with strain and layer confinement

Abstract

Two-dimensional bilayer structures exhibit novel properties not existing in the monolayer ones like bilayer hexagonal boron nitride (h-BN) with exotic interfacial ferroelectrics originated by laterally sliding one layer over the other (K. Yasuda, et al., Science, 2021, 372, 1458; M. Vizner Stern, et al., Science, 2021, 372, 1462). This intriguing property provides the sliding bilayer h-BN with promising applications in slidetronics. However, the thermal transport behaviour in the sliding bilayer h-BN is still unclear. Here, we systematically investigate the influence of the lattice configurations on the thermal conductivity (κ) of sliding bilayer h-BN structures as well as its manipulation with strain and layer confinement via first-principles. Our results show that structures with boron head-to-head stacking (B–B) exhibit lower κ values than the ones with nitrogen on the top of boron stacking (B–N). The phonon spectra and weighted phase space indicate a softer layer-breathing mode (ZO′) mode and higher three-phonon scattering rate of B–B patterns, leading to a lower κ. The moderate out-of-plane compressive strain of −6% significantly decreases the κ of B–B structures by about 50% through enhanced anharmonic scattering, while the higher strain of −18% suppresses the anharmonic scattering and increases the κ instead. Finally, we study the stacking dependence of the κ in tri-layer and bulk structures.

Graphical abstract: Thermal conductivity of sliding bilayer h-BN and its manipulation with strain and layer confinement

  • This article is part of the themed collection: #MyFirstJMCC

Supplementary files

Article information

Article type
Paper
Submitted
02 May 2023
Accepted
15 Jul 2023
First published
18 Jul 2023

J. Mater. Chem. C, 2023,11, 11082-11090

Thermal conductivity of sliding bilayer h-BN and its manipulation with strain and layer confinement

Y. Zhao, C. Zhang, S. Shin and L. Shen, J. Mater. Chem. C, 2023, 11, 11082 DOI: 10.1039/D3TC01531A

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