High-performance ultraviolet photodetectors based on MAPbCl3 perovskites for visible-light-insensitive defect detection

Abstract

Ultraviolet (UV) sensitive photodetectors (PDs) are highly desirable for surface defect detection applications. Here, an ultra-stable and high-performance UV PD with a TiO₂/MAPbCl₃/PTAA p-i-n structure is achieved by the vapor-phase anion exchange method, addressing the previously reported disadvantages of low detectivity (D*) and narrow linear dynamic range (LDR) performance. The proposed UV PD exhibits a wide LDR of 146 dB, low dark current of 8 × 10⁻¹¹ A, responsivity (R) of 70 mA W⁻¹ and D* of 1.51 × 10¹² Jones. Finally, UV imaging applications using the proposed UV PD as an imaging sensor are demonstrated. This UV imaging system exhibits excellent imaging performance for glass surface visible-light-insensitive defect detection. The imaging result highlights the great potential of the proposed MAPbCl₃-based PDs as competitive candidates for UV imaging.