Correction: First principles study of electronic and optical properties and photocatalytic performance of GaN–SiS van der Waals heterostructure

S. S. Sabir; M. Farooq; H. U. Din; Q. Alam; M. Idrees; M. Bilal; B. Amin

doi:10.1039/D3RA90031B

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Correction: First principles study of electronic and optical properties and photocatalytic performance of GaN–SiS van der Waals heterostructure

S. S. Sabir,^a M. Farooq,^a H. U. Din,*^bc Q. Alam,^a M. Idrees,^b M. Bilal^b and B. Amin*^b

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* Corresponding authors

^a Department of Physics, Hazara University, Mansehra, Pakistan

^b Department of Physics, Abbottabad University of Science and Technology, Abbottabad, Pakistan
E-mail: haleem.uddin@yahoo.com

^c Department of Physics, Bacha Khan University, Charsadda, Pakistan

Abstract

Correction for ‘First principles study of electronic and optical properties and photocatalytic performance of GaN–SiS van der Waals heterostructure’ by S. S. Sabir et al., RSC Adv., 2021, 11, 32996–33003, https://doi.org/10.1039/D1RA06011B.

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First principles study of electronic and optical properties and photocatalytic p…

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DOI: https://doi.org/10.1039/D3RA90031B
Article type: Correction
Submitted: 30 Mar 2023
Accepted: 30 Mar 2023
First published: 13 Apr 2023
This article is Open Access

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RSC Adv., 2023,13, 11546-11546

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Correction: First principles study of electronic and optical properties and photocatalytic performance of GaN–SiS van der Waals heterostructure

S. S. Sabir, M. Farooq, H. U. Din, Q. Alam, M. Idrees, M. Bilal and B. Amin, RSC Adv., 2023, 13, 11546 DOI: 10.1039/D3RA90031B

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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Correction: First principles study of electronic and optical properties and photocatalytic performance of GaN–SiS van der Waals heterostructure

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