Correction: Integrated 4-terminal single-contact nanoelectromechanical relays implemented in a silicon-on-insulator foundry process

Yingying Li; Elliott Worsey; Simon J. Bleiker; Pierre Edinger; Mukesh Kumar Kulsreshath; Qi Tang; Alain Yuji Takabayashi; Niels Quack; Peter Verheyen; Wim Bogaerts; Kristinn B. Gylfason; Dinesh Pamunuwa; Frank Niklaus

doi:10.1039/D3NR90214E

Correction: Integrated 4-terminal single-contact nanoelectromechanical relays implemented in a silicon-on-insulator foundry process

Yingying Li,^a Elliott Worsey,^b Simon J. Bleiker,^a Pierre Edinger,^a Mukesh Kumar Kulsreshath,^b Qi Tang,^b Alain Yuji Takabayashi,^c Niels Quack,^c Peter Verheyen,^d Wim Bogaerts,^de Kristinn B. Gylfason,^a Dinesh Pamunuwa

*^b and Frank Niklaus*^a

Author affiliations

* Corresponding authors

^a KTH Royal Institute of Technology, 11428 Stockholm, Sweden
E-mail: frank@kth.se

^b University of Bristol, BS8 1UB Bristol, UK
E-mail: Dinesh.Pamunuwa@bristol.ac.uk

^c École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland

^d IMEC, 3001 Leuven, Belgium

^e Ghent University, 9052 Gent, Belgium

Abstract

Correction for ‘Integrated 4-terminal single-contact nanoelectromechanical relays implemented in a silicon-on-insulator foundry process’ by Yingying Li et al., Nanoscale, 2023, https://doi.org/10.1039/d3nr03429a.

Nanoscale

Correction: Integrated 4-terminal single-contact nanoelectromechanical relays implemented in a silicon-on-insulator foundry process

Abstract

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