Issue 48, 2023

An ultrafast and self-powered MoSxSe2−x/Si photodetector with high light-trapping structures and a SiOx interface layer

Abstract

MoSxSe2−x nanofilms, as a typical metal dichalcogenide, have attracted great interest, due to their adjustable bandgap and distinctive electronic and optical properties. However, the inherent bandgap of MoSxSe2−x and the strong interface recombination impede the actualization of a high-sensitivity photodetector (PD). Few-layer MoSxSe2−x nanofilms were prepared with vertically orientation at 450 °C, which would be a less restrictive choice of substrates. Herein, a self-powered MoSxSe2−x/SiOx/Si photodetector was fabricated which exhibits unprecedented performance with excellent reproducibility and stability from 405 nm to 980 nm, a high responsivity (0.450 A W−1), normalized detectivity (4.968 × 1012 Jones) and ultrafast photoresponse (τr = 1.20 μs, τf = 4.92 μs) at zero bias under 980 nm incident laser illumination with a density of 200 μW cm−2. Significantly, the self-powered PD is capable of detecting ultraweak IR signals below 200 μW cm−2 with high on–off ratios. More importantly, an oxidized atomic layer is generated through the wet oxidation in the Piranha solution. The PD can work well at high frequencies even at 100 kHz, which shows its potential application in high-frequency photoelectric devices and health monitors. Summing up, this work not only suggests that an ultrathin SiOx interface layer can reduce carrier recombination via simple interface engineering, but also proposes a novel strategy for the preparation of high-performance and low-cost optoelectronic devices.

Graphical abstract: An ultrafast and self-powered MoSxSe2−x/Si photodetector with high light-trapping structures and a SiOx interface layer

Supplementary files

Article information

Article type
Paper
Submitted
02 Aug 2023
Accepted
08 Nov 2023
First published
14 Nov 2023

Nanoscale, 2023,15, 19691-19702

An ultrafast and self-powered MoSxSe2−x/Si photodetector with high light-trapping structures and a SiOx interface layer

Z. Yue, H. Shen, C. Wang, Y. Xu, J. Zheng, Y. Li, J. Zhang, J. Chen, H. Bai, H. Li, J. Zeng and L. Wang, Nanoscale, 2023, 15, 19691 DOI: 10.1039/D3NR03845A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements