Issue 7, 2023

Quantum transport of sub-5 nm InSe and In2SSe monolayers and their heterostructure transistors

Abstract

The emerging two-dimensional (2D) semiconductors hold a promising prospect for sustaining Moore's law benefitting from the excellent device electrostatics with narrowed channel length. Here, the performance limits of sub-5 nm InSe and In2SSe metal–oxide–semiconductor field-effect transistors (MOSFETs) are explored by ab initio quantum transport simulations. The van der Waals heterostructures prepared by assembling different two-dimensional materials have emerged as a new design of artificial materials with promising physical properties. In this study, device performance was investigated utilizing InSe/In2SSe van der Waals heterostructure as the channel material. Both the monolayer and heterostructure devices can scale Moore's law down to 5 nm. A heterostructure transistor exhibits a higher on-state current and faster switching speed compared with isolated monolayer transistors. This work proves that the sub-5 nm InSe/In2SSe MOSFET can satisfy both the low power and high-performance requirements for the international technology roadmap for semiconductors in the next decade and can provide a feasible approach for enhancing device performance.

Graphical abstract: Quantum transport of sub-5 nm InSe and In2SSe monolayers and their heterostructure transistors

Supplementary files

Article information

Article type
Paper
Submitted
22 Dec 2022
Accepted
14 Jan 2023
First published
16 Jan 2023

Nanoscale, 2023,15, 3496-3503

Quantum transport of sub-5 nm InSe and In2SSe monolayers and their heterostructure transistors

H. Guo, Y. Yin, W. Yu, J. Robertson, S. Liu, Z. Zhang and Y. Guo, Nanoscale, 2023, 15, 3496 DOI: 10.1039/D2NR07180K

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