Issue 30, 2023

A graphene/h-BN MEMS varactor for sub-THz and THz applications

Abstract

Recent development of terahertz systems has created the need for new elements operating in this frequency band, i.e., fast tunable devices such as varactors. Here, we present the process flow and characterization of a novel electronic variable capacitor device that is made with the use of 2D metamaterials such as graphene (GR) or hexagonal boron nitride (h-BN). Comb-like structures are etched into a silicon/silicon nitride substrate and a metal electrode is deposited at the bottom. Next, a PMMA/GR/h-BN layer is placed on top of the sample. As voltage is applied between GR and metal, the PMMA/GR/h-BN layer bends towards the bottom electrode thus decreasing the distance between electrodes and changing the capacitance. The high tunability and complementary metal oxide semiconductor (CMOS)-compatible process flow of the platform for our device and its millimeter size make it promising for applications in future electronics and terahertz technologies. The goal of our research is to integrate our device with dielectric rod waveguides, thus making THz phase shifters.

Graphical abstract: A graphene/h-BN MEMS varactor for sub-THz and THz applications

Associated articles

Article information

Article type
Paper
Submitted
08 Dec 2022
Accepted
01 Jun 2023
First published
30 Jun 2023

Nanoscale, 2023,15, 12530-12539

A graphene/h-BN MEMS varactor for sub-THz and THz applications

P. A. Dróżdż, M. Haras, A. Przewłoka, A. Krajewska, M. Filipiak, M. Słowikowski, B. Stonio, K. Czerniak-Łosiewicz, Z. Mierczyk, T. Skotnicki and D. Lioubchenko, Nanoscale, 2023, 15, 12530 DOI: 10.1039/D2NR06863J

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