Issue 8, 2023

Recent advances in 2D TMD circular photo-galvanic effects

Abstract

Two-dimensional (2D) layered semiconductors are appealing materials for high-specific-power photovoltaic systems due to their unique optoelectronic properties. The 2D materials can be naturally thin, and their properties can be altered in a variety of ways. Therefore, these materials may be used to develop high-performance opto-spintronic and photovoltaic devices. The most recent and promising strategies were used to induce circular photo-galvanic effects (CPGEs) in 2D TMD materials with broken inversion symmetry. The majority of quantum devices were manufactured by mechanical exfoliation to investigate the electrical behavior of ultrathin 2D materials. The investigation of CPGEs in 2D materials could enable the exploration of spin-polarized optoelectronics to produce more energy-efficient computing systems. The current research on nanomaterial-based materials paves the way for developing materials to store, manipulate, and transmit information with better performance. Finally, this study concludes by summarizing the current challenges and prospects.

Graphical abstract: Recent advances in 2D TMD circular photo-galvanic effects

Article information

Article type
Review Article
Submitted
27 Sep 2022
Accepted
04 Jan 2023
First published
05 Jan 2023

Nanoscale, 2023,15, 3651-3665

Recent advances in 2D TMD circular photo-galvanic effects

S. Aftab, H. H. Hegazy and M. Z. Iqbal, Nanoscale, 2023, 15, 3651 DOI: 10.1039/D2NR05337C

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