Bioresistive random access memory with an in-memory computing function based on graphene quantum dots

Abstract

Al/PMMA/SY : GQDs/PMMA/ITO devices with multilayer structures were fabricated by imbedding PMMA at both ends of soybean (SY) and graphene quantum dot (GQD) dielectric layers, which not only improved the stability of the devices but also reduced the threshold voltage and power consumption. A single unit of the device can complete the logical “AND” and “OR” operations to realize the memory calculation, which provides a new way to overcome the memory bottleneck of computer systems.