Issue 9, 2023

High-performance diodes based on black phosphorus/carbon nanomaterial heterostructures

Abstract

The performance of diodes, which are the basic building blocks in integrated circuits, highly depends on the materials used. Black phosphorus (BP) and carbon nanomaterials with unique structures and excellent properties can form heterostructures with favorable band matching to fully utilize their respective advantages and thus achieve high diode performance. Here, high-performance Schottky junction diodes based on a two-dimensional (2D) BP/single-walled carbon nanotube (SWCNT) film heterostructure and a BP nanoribbon (PNR) film/graphene heterostructure were investigated for the first time. The fabricated Schottky diode based on the heterostructure with the 10 nm-thick 2D BP stacked on the SWCNT film had a rectification ratio of 2978 and a low ideal factor of 1.5. The Schottky diode based on the heterostructure with the PNR film stacked on the graphene exhibited a high rectification ratio of 4455 and an ideal factor of 1.9. The high rectification ratios for both devices were attributed to the large Schottky barriers formed between the BP and carbon materials, thus leading to a small reverse current. We found that the thickness of the 2D BP in the 2D BP/SWCNT film Schottky diode and the stacking order of the heterostructure in the PNR film/graphene Schottky diode had a significant effect on the rectification ratio. Furthermore, the rectification ratio and breakdown voltage of the resulting PNR film/graphene Schottky diode were larger than those of the 2D BP/SWCNT film Schottky diode, which was attributed to the larger bandgap of the PNRs compared to the 2D BP. This study demonstrates that high-performance diodes can be achieved via the collaborative application of BP and carbon nanomaterials.

Graphical abstract: High-performance diodes based on black phosphorus/carbon nanomaterial heterostructures

Article information

Article type
Paper
Submitted
18 Feb 2023
Accepted
13 Mar 2023
First published
13 Mar 2023
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2023,5, 2427-2436

High-performance diodes based on black phosphorus/carbon nanomaterial heterostructures

X. Ye, Y. Zhang, S. Gao, X. Zhao, K. Xu, L. Wang, S. Jiang, F. Shi, J. Yang, Z. Cao and C. Chen, Nanoscale Adv., 2023, 5, 2427 DOI: 10.1039/D3NA00107E

This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. You can use material from this article in other publications, without requesting further permission from the RSC, provided that the correct acknowledgement is given and it is not used for commercial purposes.

To request permission to reproduce material from this article in a commercial publication, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party commercial publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements