A semiconducting supramolecular novel Ni(ii)-metallogel derived from 5-aminoisophthalic acid low molecular weight gelator: an efficient Schottky barrier diode application

Abstract

An outstanding approach for the development of a supramolecular metallogel with nickel(II) ion and 5-aminoisophthalic acid as a gelator (LMWG) in DMF medium has been accomplished at room temperature. Rheological studies of the supramolecular Ni(II)-metallogel established the mechanical compactness of the gel material. FESEM microstructural study and EDX elemental mapping showed flake-like morphological patterns and major chemical constituents of the Ni(II)-metallogel. The possible metallogel formation approach has been examined using FT-IR spectroscopic study. Moreover, the supramolecular Ni(II)-metallogel assemblies show electrical conductivity in metal–semiconductor (MS) junction electronic devices. The metallogel based thin film device shows an electrical conductivity of 1.53 × 10⁻⁵ S m⁻¹. Semiconductor properties such as Schottky barrier diode nature of the synthesized Ni(II)-metallogel based devices were explored.