Issue 12, 2023

Effect of Pd(ii) uptake on high-temperature phase transitions in a hybrid organic–inorganic perovskite semiconductor

Abstract

Hybrid organic–inorganic perovskites (HOIPs) have been widely studied for their interesting functions and potential applications. Here, we report a novel sulfur-containing hybrid organic–inorganic perovskite based on a one-dimensional ABX3-type compound: [C3H7N2S]PbI3 ([C3H7N2S]+ is 2-amino-2-thiazolinium) (1). Compound 1 undergoes two high-temperature phase transitions at 363 K and 401 K, respectively, showing a band gap of 2.33 eV, and has a narrower band gap compared to other one-dimensional materials. Moreover, by introducing thioether groups into the organic component, 1 has the ability to uptake Pd(II) ions. Compared with previously reported low-temperature isostructural phase transition sulfur-containing hybrids, the molecular motion of 1 becomes more intense under the stimulation of high temperature, leading to changes in the space group during the two phase transitions (PbcaPmcnCmcm), which are no longer the previous isostructural phase transitions. Significant changes in the phase transition behavior and semiconductor properties before and after metal absorption make it possible to monitor the absorption process of metal ions. The study of the effect of Pd(II) uptake on phase transitions may be helpful to reveal the mechanism of phase transitions more deeply. This work will broaden the hybrid organic–inorganic ABX3-type semiconductor family and pave the way for the development of organic–inorganic hybrid-based multifunctional phase transition materials.

Graphical abstract: Effect of Pd(ii) uptake on high-temperature phase transitions in a hybrid organic–inorganic perovskite semiconductor

Supplementary files

Article information

Article type
Paper
Submitted
01 Nov 2022
Accepted
17 Feb 2023
First published
03 Mar 2023

Dalton Trans., 2023,52, 3815-3820

Effect of Pd(II) uptake on high-temperature phase transitions in a hybrid organic–inorganic perovskite semiconductor

Y. Xu, K. Xu, L. He, J. Mu, T. Yin, J. Men and Q. Ye, Dalton Trans., 2023, 52, 3815 DOI: 10.1039/D2DT03526J

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