Issue 38, 2023

A two-dimensional VO2/VS2 heterostructure as a promising cathode material for rechargeable Mg batteries: a first principles study

Abstract

Rechargeable magnesium batteries (RMBs) are considered as highly promising energy storage systems. However, the lack of cathode materials with fast Mg2+ diffusion kinetics and high energy density severely hinders the development of RMBs. Herein, a two-dimensional (2D) VO2/VS2 heterostructure as a RMB cathode material is proposed by introducing an O–V–O layer in VS2 to improve the discharge voltage and specific capacity while keeping the fast Mg2+ diffusion kinetics. Based on first principle calculations, the geometric structures, electronic characteristics of the VO2/VS2 heterostructure, and the adsorption properties and diffusion behaviors of Mg2+ in VO2/VS2 are systematically studied. The metallic properties of VO2/VS2 and a relatively low diffusion barrier of Mg2+ (0.6 eV) in VO2/VS2 enable a large potential in delivering high rate performance in actual RMBs. Compared with traditional VS2 materials (1.25 V), the average discharge platform of VO2/VS2 could be increased to 1.7 V. The theoretical capacities of the layered VS2 and VO2/VS2 are calculated as 233 and 301 mA h g−1, respectively. Thus, the VO2/VS2 heterostructure exhibits a high theoretical energy density of 511.7 W h kg−1, significantly surpassing that of VS2 (291.3 W h kg−1). This work provides important guidance for designing high-energy and high-rate 2D heterostructure cathode materials for RMBs and other multivalent ion batteries.

Graphical abstract: A two-dimensional VO2/VS2 heterostructure as a promising cathode material for rechargeable Mg batteries: a first principles study

Supplementary files

Article information

Article type
Paper
Submitted
26 May 2023
Accepted
08 Sep 2023
First published
11 Sep 2023

Phys. Chem. Chem. Phys., 2023,25, 26289-26297

A two-dimensional VO2/VS2 heterostructure as a promising cathode material for rechargeable Mg batteries: a first principles study

L. Luo§, S. Tan, Z. Gao, X. Yang, J. Xu, G. Huang, J. Wang and F. Pan, Phys. Chem. Chem. Phys., 2023, 25, 26289 DOI: 10.1039/D3CP02422A

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