Transition from Schottky to ohmic contacts in the C31 and MoS2 van der Waals heterostructure

Abstract

The utilization of conventional metal contacts has restricted the industrial implementation of two-dimensional channel materials. To address this issue, we conducted first-principles calculations to investigate the interface properties of C₃₁ and MoS₂ contacts. An ohmic contact and a low van der Waals barrier were found in the C₃₁/MoS₂ heterostructure. Our findings provide a promising new contact metal material for two-dimensional nanodevices based on MoS₂.