Strain-induced dark exciton generation in rippled monolayer MoS2

Abstract

Recently, it has been revealed that dark excitons play a significant role in optically controlled information processing due to their much longer radiative lifetimes than those of bright ones. For the realizable implementation of the features, it is important to understand and manipulate conditions in which dark excitons could exist. We adopt strain-engineered rippling as a new parameter for the modification of the electronic structure of monolayer MoS₂ and demonstrate the efficient conversion of bright to dark excitons via a first-principles study. For rippled monolayer MoS₂ above a strain of ∼6.8%, we show that the spin order of the conduction band is reversed and the spin forbidden dark exciton then goes below the bright one.