Issue 19, 2023

Growth mechanism of [100]-oriented TaON film through an endotaxial transformation from a (012)-LiTaO3 single crystal substrate

Abstract

Metal nitrides are usually prepared by high temperature nitridation with metal oxide precursors under an NH3 atmosphere. However, owing to the differences in crystal structures between oxide precursors and nitride products, the preparation of oriented nitride nanostructures is difficult and challenging. Our previous work has demonstrated that a [100]-oriented TaON film can be fabricated by using a (012)-LiTaO3 single crystal substrate through an endotaxial transformation process. However, details about the endotaxial growth mechanism are still unclear. In this work, we systematically investigated the endotaxial growth process of TaON from the LiTaO3 single crystal substrate, and proposed a plausible growth mechanism. This work could be helpful to deepen the understanding of the unique endotaxial growth process and facilitate the fabrication of other oriented nitride nanostructures.

Graphical abstract: Growth mechanism of [100]-oriented TaON film through an endotaxial transformation from a (012)-LiTaO3 single crystal substrate

Supplementary files

Article information

Article type
Paper
Submitted
06 Feb 2023
Accepted
04 Apr 2023
First published
28 Apr 2023

CrystEngComm, 2023,25, 2897-2904

Growth mechanism of [100]-oriented TaON film through an endotaxial transformation from a (012)-LiTaO3 single crystal substrate

X. Qin, H. Li, Z. Wang, Z. Zheng, P. Wang, H. Cheng, Y. Liu, Y. Fan, Y. Dai and B. Huang, CrystEngComm, 2023, 25, 2897 DOI: 10.1039/D3CE00114H

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