Issue 18, 2023

Correction: Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer

Abstract

Correction for ‘Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer’ by Se Hyun Kim et al., Chem. Commun., 2021, 57, 12452–12455, https://doi.org/10.1039/D1CC04966F.

Associated articles

Article information

Article type
Correction
Submitted
26 Jan 2023
Accepted
26 Jan 2023
First published
17 Feb 2023
This article is Open Access
Creative Commons BY license

Chem. Commun., 2023,59, 2668-2668

Correction: Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer

S. H. Kim, G. T. Yu, G. H. Park, D. H. Lee, J. Y. Park, K. Yang, E. B. Lee, J. I. Lee and M. H. Park, Chem. Commun., 2023, 59, 2668 DOI: 10.1039/D3CC90042H

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