Correction: Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga2O3 with high hole mobility

Congcong Ma; Zhengyuan Wu; Zhuoxun Jiang; Ying Chen; Wei Ruan; Hao Zhang; Heyuan Zhu; Guoqi Zhang; Junyong Kang; Tong-Yi Zhang; Junhao Chu; Zhilai Fang

doi:10.1039/D2TC90092K

Correction: Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga₂O₃ with high hole mobility†

Congcong Ma,‡^ab Zhengyuan Wu,‡^ab Zhuoxun Jiang,^a Ying Chen,^ab Wei Ruan,^a Hao Zhang,*^ac Heyuan Zhu,^a Guoqi Zhang,^a Junyong Kang,^d Tong-Yi Zhang,^e Junhao Chu^b and Zhilai Fang*^ab

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* Corresponding authors

^a School of Information Science and Technology, and Academy for Engineering and Technology, Fudan University, Shanghai 200433, China
E-mail: zlfang@fudan.edu.cn

^b Institute of Optoelectronics, Fudan University, Shanghai 200433, China

^c Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, Zhejiang 322000, China
E-mail: zhangh@fudan.edu.cn

^d Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China

^e Materials Genome Institute, Shanghai University, 333 Nanchen Road, Shanghai 200444, China

Abstract

Correction for ‘Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga₂O₃ with high hole mobility’ by Congcong Ma et al., J. Mater. Chem. C, 2022, DOI: https://doi.org/10.1039/d1tc05324h.

Journal of Materials Chemistry C

Correction: Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga₂O₃ with high hole mobility†

Abstract

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Correction: Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga₂O₃ with high hole mobility

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Journal of Materials Chemistry C