Nanocomposites of chalcogenide phase-change materials: from C-doping of thin films to advanced multilayers

Abstract

Engineering of chalcogenide phase-change materials at the nanoscale is required to improve the performances of ultimate size memory devices and reduce their power consumption. Amorphous C-doped GeTe thin films and innovative multilayers consisting of periodic stacks of a few nm thick GeTe, or Ge₂Sb₂Te₅, and C layers with a thickness between 0.5 and 2 nm are deposited by magnetron sputtering at room temperature. The phase-change material is then crystallized by heat treatment. In C-doped GeTe films, the phase separation of C and GeTe during the GeTe crystallization leads to the spontaneous formation of a nanocomposite, consisting of amorphous C located at the grain boundaries of GeTe crystallites, but the resulting nanostructure is highly disordered. In contrast, the deposition of multilayers allows control of the nanostructure and the interfaces between the phase-change material and the C phase. Transmission electron microscopy and X-ray diffraction at room temperature and as a function of temperature during annealing show that the multilayer structure is maintained after crystallization of the phase-change material, even when the thickness of the C layer is as low as 0.5 nm. GeTe and Ge₂Sb₂Te₅ crystallites are anisotropic, their size in the direction perpendicular to the layers being determined by the design of the multilayer. The crystallisation temperature of the GeTe and Ge₂Sb₂Te₅ layers depends on the structure of the stack, revealing scaling and stress effects. The results presented show that GeTe/C and Ge₂Sb₂Te₅/C MLs are promising for applications in memory devices and also in photonic and thermoelectric devices.