Twist-stacked 2D bilayer Fe3GeTe2 with tunable magnetism

Abstract

Controlling magnetism in two-dimensional (2D) magnetic compounds is of great significance for potential applications in novel spintronic devices. Based on the van der Waals monolayer, twist-stacking of bilayers can lead to different interlayer magnetic ordering, which provides an additional way to tune the magnetism of a 2D system. In this work, an antiferromagnetic–ferromagnetic phase transition is realized by applying a “twist-stacking” scheme, in which the two Fe₃GeTe₂ layers are rotated through a designed angle to form different stacking orders of Fe, Ge and Te. In addition, we demonstrate the manipulations of the electronic structure and charge transfer in a twist-stacked Fe₃GeTe₂ bilayer. By realizing different stacking orders of atoms, our twist-stacking scheme provides a platform for designing and manipulating 2D van der Waals magnetic systems.