Issue 32, 2022

Self-assembled graphene/BUBD-1 hybrids for ultrasensitive organic phototransistors

Abstract

Organic molecules have been attracting intense attention as promising candidates in future large-area, low-manufacturing-cost, and flexible optoelectronic devices. However, limited by their short exciton diffusion length, low mobility, and poor crystallinity, the fabrication of high-performance photodetectors faces severe challenges. Herein, using graphene as a growth substrate, a highly ordered BUBD-1 molecular packing was directly assembled employing conventional thermal evaporation. A sensitive phototransistor covering the UV-visible range (295–658 nm) was demonstrated based on this self-assembled graphene/BUBD-1 organic hybrid. The strong light–matter interaction of organic molecules and efficient interfacial charge transfer enabled a high responsivity of ∼106 A W−1 and reasonable specific detectivity of >1012 cm Hz1/2 W−1. Interestingly, the separation and recombination processes of photogenerated electron–hole pairs were highly gate-tunable, and the fastest rise/decay time of 0.33/0.49 ms was simultaneously achieved at VG = −60 V. The charge transfer that dominated the rise time was limited by two elements: interfacial electric field and carrier density in graphene. For the annihilation of photogenerated carriers, indirect recombination centers in the organic molecular layer and interfacial potential barrier height play a decisive role in the decay time. Our results open up a new avenue for constructing large-scale hybrid films by simple direct growth and also provide some insights into interfacial photogenerated carrier dynamics for electronic applications.

Graphical abstract: Self-assembled graphene/BUBD-1 hybrids for ultrasensitive organic phototransistors

Supplementary files

Article information

Article type
Paper
Submitted
03 Apr 2022
Accepted
17 Jun 2022
First published
21 Jun 2022

J. Mater. Chem. C, 2022,10, 11710-11718

Self-assembled graphene/BUBD-1 hybrids for ultrasensitive organic phototransistors

S. Qin, X. Qin, Q. Du, Y. Gan, Y. Zhang, A. Wang, X. Yan, R. Dong, Y. Liu, S. Li, C. Liu, W. Wang and F. Wang, J. Mater. Chem. C, 2022, 10, 11710 DOI: 10.1039/D2TC01352E

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements